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| NTHD4102P Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFETt Features * Offers an Ultra Low RDS(ON) Solution in the ChipFET Package * Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 * Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin * * * Environments such as Portable Electronics Simplifies Circuit Design since Additional Boost Circuits for Gate Voltages are not Required Operated at Standard Logic Level Gate Drive, Facilitating Future Migration to Lower Levels using the same Basic Topology Pb-Free Package is Available V(BR)DSS http://onsemi.com RDS(ON) TYP 64 mW @ -4.5 V -20 V 85 mW @ -2.5 V 120 mW @ -1.8 V -4.1 A ID MAX Applications * Optimized for Battery and Load Management Applications in * Charge Control in Battery Chargers * Buck and Boost Converters Portable Equipment such as MP3 Players, Cell Phones, and PDAs G1 S1 S2 G2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t 10 s Power Dissipation (Note 1) Pulsed Drain Current Steady State t 10 s TA = 25C TA = 25C TA = 85C TA = 25C PD Symbol VDSS VGS ID Value -20 "8.0 -2.9 -2.1 -4.1 1.1 2.1 IDM TJ, TSTG IS TL -13.8 -55 to 150 -1.1 260 A C A C D1 8 D1 7 D2 6 D2 5 W Unit V V A D1 P-Channel MOSFET D2 P-Channel MOSFET ChipFET CASE 1206A STYLE 2 PIN CONNECTIONS 1 S1 2 G1 3 S2 4 G2 1 2 3 4 MARKING DIAGRAM 8 7 6 5 C7 M tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient, Steady State (Note 1) Junction-to-Ambient, t 10s (Note 1) RqJA Symbol Max 113 60 Units C/W C7 = Specific Device Code M = Month Code ORDERING INFORMATION Device NTHD4102PT1 NTHD4102PT1G Package ChipFET ChipFET (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTHD4102P/D (c) Semiconductor Components Industries, LLC, 2004 1 October, 2004 - Rev. 4 NTHD4102P ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(Br)DSS V(Br)DSS/TJ IDSS TJ = 25C TJ = 85C VGS = 0 V, ID = -250 mA -20 -15 -1.0 -5.0 "100 nA V mV/C mA Symbol Test Condition Min Typ Max Unit VGS = 0 V VDS = -16 V Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance IGSS VDS = 0 V, VGS = "8.0 V VGS(TH) VGS(TH)/TJ RDS(ON) () VGS = VDS, ID = -250 mA -0.45 2.7 -1.5 V mV/C VGS = -4.5 V, ID = -2.9 A VGS = -2.5 V, ID = -2.2 A VDS = -1.8 V, ID = -1.0 A 64 85 120 7.0 80 110 170 mW Forward Transconductance CHARGES, CAPACITANCES, AND GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge gFS VDS = -10 V, ID = -2.9 A S CISS COSS CRSS QG(TOT) QGS QGD VGS = 0 V, f = 1.0 MHz, VDS = -16 V 750 100 45 7.6 8.6 pF nC VGS = -4.5 V, VDS = -16 V, ID = -2.6 A 1.3 2.6 td(ON) tr td(OFF) tf VGS = -4.5 V, VDD = -16 V, 4.5 16 ID = -2.6 A, RG = 2.0 W 5.5 12 32 23 10 25 40 35 ns VSD tRR ta tb QRR VGS = 0 V, IS = -1.1 A -0.8 20 -1.2 40 V ns VGS = 0 V, dIS/dt = 100 A/ms, IS = 1.0 A 15 5 0.01 mC 2. Pulse test: pulse width 300 ms, duty cycle 2% 3. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTHD4102P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 10 -ID, DRAIN CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 -1.8 V -1.6 V -1.4 V 7 8 VGS = -10 V to -2.8 V TJ = 25C -ID, DRAIN CURRENT (AMPS) -2.4 V 9 8 7 6 5 4 3 125C 2 1 0 0 0.5 1 1.5 2 2.5 3 3.5 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 25C TJ = -55C -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 2 4 3 5 -ID, DRAIN CURRENT (AMPS) 6 0.5 -50 -25 VGS = -4.5 V VGS = -2.5 V 1.5 Figure 2. Transfer Characteristics VGS = -4.5 V 1.3 1.1 0.9 0.7 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 10000 VGS = 0 V -IDSS, LEAKAGE (nA) 1000 TJ = 125C TJ = 100C Figure 4. On-Resistance Variation with Temperature 100 10 1 0.1 2 3 4 TJ = 25C 5 6 7 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTHD4102P TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.2 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 1000 900 C, CAPACITANCE (pF) 800 700 600 500 400 300 200 100 0 0 2 4 6 8 -VGS -VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Crss 10 12 14 16 Coss 18 20 Ciss TJ = 25C 5 QT 4 3 Q1 2 Q2 1 0 0 1 ID = -2.7 A TJ = 25C 5 6 2 3 4 Qg, TOTAL GATE CHARGE (nC) 7 8 Figure 6. Capacitance Variation Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Gate Charge 1000 -IS, SOURCE CURRENT (AMPS) VDD = -10 V ID = -1.0 A VGS = -4.5 V t, TIME (ns) 100 5 VGS = 0 V TJ = 25C 4 3 10 td(off) tf tr td(on) 2 1 0 0.4 1 1 10 RG, GATE RESISTANCE (OHMS) 100 0.5 0.6 0.7 0.8 0.9 1.0 1.1 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 8. Resistive Switching Time Variation vs. Gate Resistance 100 -I D, DRAIN CURRENT (AMPS) Figure 9. Diode Forward Voltage vs. Current 10 10 ms 100 ms 1 ms 10 ms 1 VGS = -8 V SINGLE PULSE TC = 25C 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 0.01 0.1 10 1 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 Figure 10. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTHD4102P PACKAGE DIMENSIONS ChipFET] CASE 1206A-03 ISSUE E A 8 7 6 5 M K 5 6 3 7 2 8 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE. 4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL AND VERTICAL SHALL NOT EXCEED 0.08 MM. 5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS. 6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD SURFACE. 7. 1206A-01 AND 1206A-02 OBSOLETE. NEW STANDARD IS 1206A-03. DIM A B C D G J K L M S MILLIMETERS MIN MAX 2.95 3.10 1.55 1.70 1.00 1.10 0.25 0.35 0.65 BSC 0.10 0.20 0.28 0.42 0.55 BSC 5 NOM 1.80 2.00 INCHES MIN MAX 0.116 0.122 0.061 0.067 0.039 0.043 0.010 0.014 0.025 BSC 0.004 0.008 0.011 0.017 0.022 BSC 5 NOM 0.072 0.080 S 1 2 3 4 B 4 L G D J STYLE 2: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE 1 GATE 1 SOURCE 2 GATE 2 DRAIN 2 DRAIN 2 DRAIN 1 DRAIN 1 C 0.05 (0.002) SOLDERING FOOTPRINT* 2.032 0.08 0.457 0.018 0.635 0.025 0.635 0.025 1.092 0.043 2.032 0.08 0.178 0.007 0.457 0.018 0.711 0.028 0.66 0.026 SCALE 20:1 mm inches 0.66 0.026 0.254 0.010 SCALE 20:1 mm inches Basic *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Style 2 http://onsemi.com 5 NTHD4102P ChipFET is a trademark of Vishay Siliconix. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTHD4102P/D |
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